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Freescale Semiconductor Technical Data
Document Number: MW6IC2420N Rev. 0, 3/2007
RF LDMOS Integrated Power Amplifier
The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. Driver Applications * Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts Power Gain -- 19.5 dB Power Added Efficiency -- 27% * Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW Pout. Features * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * Integrated ESD Protection * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW6IC2420NBR1
2450 MHz, 20 W, 28 V CW RF LDMOS INTEGRATED POWER AMPLIFIER
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC
VDS1 RFin RFout/VDS2
GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout / VDS2
VGS1 VGS2 VDS1
Quiescent Current Temperature Compensation
13 12
NC GND
Figure 1. Functional Block Diagram
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 2. Pin Connections
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MW6IC2420NBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +68 - 0.5, +6 - 65 to +200 200 23 Unit Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case W - CDMA Application (Pout = 4.5 W Avg.) Stage 1, 28 Vdc, IDQ = 210 mA Stage 2, 28 Vdc, IDQ = 370 mA Symbol RJC 1.8 1 Value (1) Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Power Added Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps PAE IM3 ACPR IRL 25.5 13.7 -- -- -- 28 15 - 43 - 46 - 15 30 -- - 40 - 43 - 10 dB % dBc dBc dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued)
MW6IC2420NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 2110 - 2170 MHz Video Bandwidth @ 20 W PEP Pout where IM3 = - 30 dBc VBW MHz -- 30 -- (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Quiescent Current Accuracy over Temperature with 18 k Gate Feed Resistors ( - 10 to 85C) (1) Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW Average Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 1 W CW Average Group Delay @ Pout = 1 W CW Including Output Matching Part - to - Part Insertion Phase Variation @ Pout = 1 W CW, Six Sigma Window IQT GF Delay -- -- -- -- -- 5 0.2 2 2.8 18 -- -- -- -- -- % dB ns
Table 6. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Pulsed Output Power (8 sec(on), 1 msec(off)) Symbol Psat Min -- Typ 60 Max -- Unit W Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 110 mA, IDQ2 = 370 mA, 2110 - 2170 MHz
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977.
MW6IC2420NBR1 RF Device Data Freescale Semiconductor 3
VDS1 C1 RF INPUT
1 2 3 NC 4 NC 5 6
DUT
16 NC 15 Z10 14 Z4 Z5 C6 Z6 C7 C8 C2 C11
VDS2
Z1 C14 VGS1
Z2 C15
Z3 7 NC 8 9 10 11
Z7
Z8 C9
Z9 C10
RF OUTPUT
Quiescent Current Temperature Compensation
Z11 NC 13 12 C4 C12
R1 VGS C3 VGS2 R2
NC
C5
NC Z1 Z2 Z3, Z8 Z4 Z5
C13
0.510 0.300 0.410 0.138 0.086
x 0.054 x 0.054 x 0.054 x 0.237 x 0.237
Microstrip Microstrip Microstrip Microstrip Microstrip
Z6 Z7 Z9 Z10, Z11 PCB
0.189 x 0.237 Microstrip 0.127 x 0.054 Microstrip 0.182 x 0.054 Microstrip 1.073 x 0.054 Microstrip Taconic RF35, 0.020, r = 3.5
Figure 3. MW6IC2420NBR1 Test Circuit Schematic -- 2450 MHz Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values
Part C1, C2, C3, C4 C5, C13 C6, C7 C8 C9 C10 C11, C12 C14 C15 R1, R2 Description 2.2 F Chip Capacitors 100 nF Chip Capacitors 0.5 pF Chip Capacitors 6.8 pF Chip Capacitor 2.2 pF Chip Capacitor 1 pF Chip Capacitor 5.6 pF Chip Capacitors 0.3 pF Chip Capacitor 0.5 pF Chip Capacitor 5 k Potentiometer CMS Cermet Multi - turn Part Number C32225X5R1H225MT C1206C104K1KAC 08051J0R5BS 08051J6R8BS 08051J2R2BS 08051J1R0BS 08051J5R6BS ATC100B0R3BT500XT ATC100B0R5BT500XT 3224W - 1 - 502E TDK Kemet AVX AVX AVX AVX AVX ATC ATC Bourns Manufacturer
MW6IC2420NBR1 4 RF Device Data Freescale Semiconductor
VDS1
VDS2 C2 C11
MW6IC2420 Rev. 0
C1
C6 C14 C5 C15 C7 C13 C8
C9
C10
C4 C3 VGS
C12
R1
R2
Figure 4. MW6IC2420NBR1 Test Circuit Component Layout -- 2450 MHz
MW6IC2420NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS -- 2450 MHz
24 30 V 23 28 V Gps, POWER GAIN (dB) 22 21 20 19 28 V 18 32 V 17 16 1 10 Pout, OUTPUT POWER (WATTS) CW 50 30 V IDQ1 = 210 mA IDQ2 = 370 mA f = 2450 MHz 10 5 0 PAE Gps VDD = 32 V 40 PAE, POWER ADDED EFFICIENCY (%) PAE, POWER ADDED EFFICIENCY (%) 35 30 25 20 15
Figure 5. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VDD
22 21.5 Gps, POWER GAIN (dB) 21 20.5 20 19.5 19 18.5 PAE 18 0.5 1 VDD = 28 V IDQ1 = 210 mA IDQ2 = 370 mA f = 2450 MHz 10 Pout, OUTPUT POWER (WATTS) CW Gps 40 35 30 25 20 15 10 5 0 50
Figure 6. Power Gain and Power Added Efficiency versus CW Output Power
24 23 108 Gps, POWER GAIN (dB) 22 21 580 mA 20 19 18 17 16 0.5 1 10 Pout, OUTPUT POWER (WATTS) CW 50 VDD = 28 V f = 2450 MHz Gps 540 mA IDQ = 620 mA MTTF (HOURS) 107 106 1st Stage 109
2nd Stage
105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 20 W Avg., and PAE = 27%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of Total IDQ
Figure 8. MTTF versus Junction Temperature MW6IC2420NBR1 6 RF Device Data Freescale Semiconductor
Zo = 50
Zload f = 2450 MHz
Zsource f = 2450 MHz
VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 W CW f MHz 2450 Zsource W 54.8 + j16.6 Zload W 0.42 + j4.3
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MW6IC2420NBR1 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MW6IC2420NBR1 8 RF Device Data Freescale Semiconductor
MW6IC2420NBR1 RF Device Data Freescale Semiconductor 9
MW6IC2420NBR1 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Mar. 2007 * Initial Release of Data Sheet Description
MW6IC2420NBR1 RF Device Data Freescale Semiconductor 11
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MW6IC2420NBR1
Rev. 12 0, 3/2007 Document Number: MW6IC2420N
RF Device Data Freescale Semiconductor

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